EL2 in GaAs: Present Status
Author:
Affiliation:
1. AT&T Bell Laboratories, Murray Hill, New Jersey 07974, USA
Publisher
Institute of Physics, Polish Academy of Sciences
Subject
General Physics and Astronomy
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural analysis of intrinsic defects in GaAs and A1(x)Gal(1-x)As by magnetooptically detected magnetic resonance spectroscopy;PHYS STATUS SOLIDI B;1999
2. Deep vacancy levels in (AlAs)[sub 1](GaAs)[sub 3] superlattices;Semiconductors;1997-05
3. Investigation of deep levels of AsGa and GaAs antistructural defects and InAs and SbGa heteroantistructural defects in GaAs using a 4×4×4 expanded unit cell technique;Russian Physics Journal;1996-08
4. Point defects and their reactions ine−-irradiated GaAs investigated by x-ray-diffraction methods;Physical Review B;1996-03-15
5. STRUCTURE AND METASTABILITY OF THE EL2 DEFECT IN GaAs;International Journal of Modern Physics B;1995-05-15
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