Deep photoluminescence band related to oxygen in gallium arsenide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93678
Reference15 articles.
1. A study of deep levels in GaAs by capacitance spectroscopy
2. Origin of the 0.82‐eV electron trap in GaAs and its annihilation by shallow donors
3. Preparation and characterization of high resistivity GaAs
4. Direct evidence for the nonassignment to oxygen of the main electron trap in GaAs
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