Pressure dependence of theDXcenter inGa1−xAlxAs:Te
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.7831/fulltext
Reference35 articles.
1. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
2. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
3. Te and Ge — doping studies in Ga1−xAlxAs
4. A new model of deep donor centres in AlxGa1-xAs
5. Comprehensive analysis of Si-dopedAlxGa1−xAs(x=0 to 1): Theory and experiments
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1. On the Ge shallow-to-deep level transition in Al-rich AlGaN;Journal of Applied Physics;2021-08-07
2. Determination of donor and DX center capture characteristics by pulsed photoluminescence;Journal of Applied Physics;2018-03-07
3. Pressure-induced deep donor level in the chalcopyrite semiconductor alloyAg0.25Cu0.75GaS2;Physical Review B;2000-02-15
4. Chapter 5.2 High-Pressure Study of DX Centers Using Capacitance Techniques;Semiconductors and Semimetals;1998
5. A search for resonant states from deep levels in GaAs and AlGaAs: Evidence from hall effect studies under pressure;physica status solidi (b);1996-06-01
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