Pressure-induced deep donor level in the chalcopyrite semiconductor alloyAg0.25Cu0.75GaS2
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.4689/fulltext
Reference15 articles.
1. Recent efficiency gains for CdTe and CuIn1−xGaxSe2 solar cells: What has changed?
2. Effects of Ga addition to CuInSe2 on its electronic, structural, and defect properties
3. Deep donor levels (DXcenters) in III‐V semiconductors
4. Structural and Optical Properties of the Cu1-xAgxGaS2System
5. Optical investigation of defects in AgGaS 2 and CuGaS 2
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electronic structure and optical properties of ternary CdXP2 semiconductors (X=Si, Ge and Sn) under pressure;Physica B: Condensed Matter;2004-06
2. Pressure Dependence of Defect Emissions and the Appearance of Pressure-Induced Deep Centers in Chalcopyrite Alloys AgxCu1?xGaS2;physica status solidi (b);2001-01
3. The optical and vibrational properties of the quaternary chalcopyrite semiconductor alloy AgxCu1−xGaS2;Journal of Applied Physics;2000-04-15
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