Evidence of metastability with athermal ionization from defect clusters in ion-damaged silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.62.16561/fulltext
Reference29 articles.
1. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
2. Calculations of Silicon Self-Interstitial Defects
3. Evolution from point to extended defects in ion implanted silicon
4. Planar Self-Interstitial in Silicon
5. Stability of Si-Interstitial Defects: From Point to Extended Defects
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2. Photodetectors;Handbook of Silicon Photonics;2013-04-09
3. All silicon infrared photodiodes: photo response and effects of processing temperature;Optics Express;2007
4. Metastablility of Interstitial Clusters in Ion-Damaged Silicon Studied by Isothermal Capacitance Transient Spectroscopy;Defect and Diffusion Forum;2002-11
5. Electrical Signature of Ion-Implantation Induced Defects in n-Silicon in the Defect Cluster Regime Studied using DLTS and Isothermal Transient Spectroscopies;MRS Proceedings;2002
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