Laplace deep level transient spectroscopy study of intrinsic hydrogenated amorphous silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopy
2. Calculation of the dynamic response of Schottky barriers with a continuous distribution of gap states
3. Evidence for the Improved Defect-Pool Model for Gap States in Amorphous Silicon from Charge DLTS Experiments on Undopeda-Si:H
4. Interpretation of the conductance and capacitance frequency dependence of hydrogenated amorphous silicon Schottky barrier diodes
5. Energy dependence of electron-capture cross section of gap states inn-typea-Si:H
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. DLTS study of InGaAs and GaAsN structures with different indium and nitrogen compositions;Materials Science in Semiconductor Processing;2018-02
2. Impact of band tail distribution on carrier trapping in hydrogenated amorphous silicon for solar cell applications;Journal of Non-Crystalline Solids;2016-03
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