Mosaic growth of GaN on (0001) sapphire: A high-resolution electron microscopy and crystallographic study of threading dislocations from low-angle to high-angle grain boundaries-Reference-Cited by-同舟云学术

Mosaic growth of GaN on (0001) sapphire: A high-resolution electron microscopy and crystallographic study of threading dislocations from low-angle to high-angle grain boundaries

Published:2000-02-15 Issue:8 Volume:61 Page:5587-5599
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Potin V.,Ruterana P.,Nouet G.,Pond R. C.,Morkoç H.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.5587/fulltext

Reference40 articles.

1. Growth defects in GaN films on sapphire: The probable origin of threading dislocations

2. Defects and Interfaces in GaN Epitaxy

3. Initial stages of growth of GaN over (0001) Al2O3 substrate using MBE: a crystallographic analysis of the defects

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