Study of residual stress in reactively sputtered epitaxial Si-doped GaN films-Reference-Cited by-同舟云学术

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Study of residual stress in reactively sputtered epitaxial Si-doped GaN films

Published:2022-11 Issue: Volume:150 Page:106902
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Monish Mohammad,Major S.S.^ORCID

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference73 articles.

1. The Blue Laser Diode: the Complete Story;Nakamura,2000

2. Power GaN Devices: Materials, Applications and Reliability;Meneghini,2016

3. Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz;Moustakas;Rep. Prog. Phys.,2017

4. The 2018 GaN power electronics roadmap;Amano;J. Phys. D Appl. Phys.,2018

5. GaN, AlN, and InN: a review;Strite;J. Vac. Sci. Technol. B Microelectron. Nanom. Struct. Process. Meas. Phenom.,1992

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mg incorporation induced microstructural evolution of reactively sputtered GaN epitaxial films to Mg-doped GaN nanorods;Nanotechnology;2024-03-12

2. Electrical transport in epitaxially grown undoped and Si-doped degenerate GaN films;Physica Scripta;2024-01-25

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