Initial stages of growth of GaN over (0001) Al2O3 substrate using MBE: a crystallographic analysis of the defects
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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3. Mosaic growth of GaN on (0001) sapphire: A high-resolution electron microscopy and crystallographic study of threading dislocations from low-angle to high-angle grain boundaries;Physical Review B;2000-02-15
4. Investigation of the atomic structure of the pure edge and a+c threading dislocations in gan layers grown by MBE;Materials Science and Engineering: B;1999-05
5. The Atomic Structure of Mosaïc Grain Boundary Dislocations in GaN Epitaxial Layers;MRS Proceedings;1999
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