Effects of interfacial suboxides and dangling bonds on tunneling current through nanometer-thick SiO2layers
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.84.033303/fulltext
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1. Local atomic and electronic structure of oxide/GaAs and SiO2/Si interfaces using high‐resolution XPS
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5. Microscopic structure of theSiO2/Si interface
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