Investigation on edge fringing effect and oxide thickness dependence of inversion current in metal-oxide-semiconductor tunneling diodes with comb-shaped electrodes-Reference-Cited by-同舟云学术

Investigation on edge fringing effect and oxide thickness dependence of inversion current in metal-oxide-semiconductor tunneling diodes with comb-shaped electrodes

Published:2014-03-28 Issue:12 Volume:115 Page:124109
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lin Chien-Chih,Hsu Pei-Lun,Lin Li,Hwu Jenn-Gwo

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4870186

Reference41 articles.

1. Ultrathin SiO2layer with a low leakage current density formed with ∼ 100% nitric acid vapor

2. High-κ gate dielectrics: Current status and materials properties considerations

3. High dielectric constant gate oxides for metal oxide Si transistors

4. Review on high-k dielectrics reliability issues

5. Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric

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