Atomic structure and composition of the2×Nreconstruction of the Ge wetting layer on Si(001) investigated by surface x-ray diffraction-Reference-Cited by-同舟云学术

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Atomic structure and composition of the2×Nreconstruction of the Ge wetting layer on Si(001) investigated by surface x-ray diffraction

Published:2011-05-17 Issue:19 Volume:83 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Zhou T.,Renaud G.,Revenant C.,Issartel J.,Schülli T. U.,Felici R.,Malachias A.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.83.195426/fulltext

Reference53 articles.

1. Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth

2. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)

3. Pathway for the Strain-Driven Two-Dimensional to Three-Dimensional Transition during Growth of Ge on Si(001)

4. Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes

5. In situx-ray scattering study on the evolution of Ge island morphology and relaxation for low growth rate: Advanced transition to superdomes

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Critical conditions for SiGe island formation during Ge deposition on Si(100) at high temperatures;Materials Science in Semiconductor Processing;2017-01

2. Atomic structure and composition distribution in wetting layers and islands of germanium grown on silicon (001) substrates;Nanotechnology;2015-11-10

3. Subcritical damping of S step energy on Si(001) vicinals by lowering terrace stress;Surface Science;2015-09

4. Heteroepitaxy of Ge on singular and vicinal Si surfaces: elastic field symmetry and nanostructure growth;Journal of Physics: Condensed Matter;2015-05-28

5. Self-assembly of InAs quantum dots on GaAs(001) by molecular beam epitaxy;Frontiers of Physics;2015-02

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