In situx-ray scattering study on the evolution of Ge island morphology and relaxation for low growth rate: Advanced transition to superdomes-Reference-Cited by-同舟云学术

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In situx-ray scattering study on the evolution of Ge island morphology and relaxation for low growth rate: Advanced transition to superdomes

Published:2009-07-16 Issue:4 Volume:80 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Richard M.-I.,Schülli T. U.,Renaud G.,Wintersberger E.,Chen G.,Bauer G.,Holý V.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.80.045313/fulltext

Reference45 articles.

1. Alloying of self-organized semiconductor 3D islands

2. Structural properties of self-organized semiconductor nanostructures

3. Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes

4. High-resolution mapping of nonuniform carrier transport at contacts to polycrystalline CdTe/CdS solar cells

5. Local equilibrium and global relaxation of strainedSiGe∕Si(001)layers

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1. Modified strain and elastic energy behavior of Ge islands formed on high-miscut Si(0 0 1) substrates;Applied Surface Science;2019-02

2. Controllable growth of GeSi nanostructures by molecular beam epitaxy;Journal of Semiconductors;2018-05-29

3. In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors;Japanese Journal of Applied Physics;2018-04-16

4. Controlling cation segregation in perovskite-based electrodes for high electro-catalytic activity and durability;Chemical Society Reviews;2017

5. Nanostructures Observed by Surface Sensitive X-Ray Scattering and Highly Focused Beams;Characterization of Semiconductor Heterostructures and Nanostructures;2013

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