Modified strain and elastic energy behavior of Ge islands formed on high-miscut Si(0 0 1) substrates-Reference-Cited by-同舟云学术

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Modified strain and elastic energy behavior of Ge islands formed on high-miscut Si(0 0 1) substrates

Published:2019-02 Issue: Volume:466 Page:801-807
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Marçal L.A.B.,Richard M.-I.,Persichetti L.,Favre-Nicolin V.,Renevier H.,Fanfoni M.,Sgarlata A.,Schülli T.Ü.,Malachias A.

Funder

FAPEMIG

CAPES

CNPq

European Union’s Horizon

ESRF

LNLS/MCTI

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference32 articles.

1. Controlling planar and vertical ordering in three-dimensional (In, Ga)As quantum dot lattices by GaAs surface orientation;Schmidbauer;Phys. Rev. Lett.,2006

2. Long-range ordered lines of self-assembled Ge islands on a flat Si (001) surface;Schmidt;Appl. Phys. Lett.,2000

3. Universal shapes of self-organized semiconductor quantum dots: striking similarities between InAs∕GaAs(001) and Ge∕Si(001);Costantinia;Appl. Phys. Lett.,2004

4. Ripple-to-dome transition: the growth evolution of Ge on vicinal Si(1 1 10) surface;Persichetti;Phys. Rev. B,2010

5. Intermixing and buried interfacial structure in strained Ge/Si(105) facets;Fazi;Phys. Rev. B,2013

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing;Surface Science;2019-05

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