Intermixing and buried interfacial structure in strained Ge/Si(105) facets-Reference-Cited by-同舟云学术

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Intermixing and buried interfacial structure in strained Ge/Si(105) facets

Published:2013-11-26 Issue:19 Volume:88 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Fazi L.,Hogan C.,Persichetti L.,Goletti C.,Palummo M.,Sgarlata A.,Balzarotti A.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.88.195312/fulltext

Reference42 articles.

1. Structural properties of self-organized semiconductor nanostructures

2. Growth and self-organization of SiGe nanostructures

3. Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth

4. Order and disorder in the heteroepitaxy of semiconductor nanostructures

5. Si/Ge nanostructures

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1. Steps and Ge epitaxy on vicinal Si (111) surfaces: An STM study;Surface Science;2020-06

2. TPD characterization of Al-OD-Si sites at the interface of bilayer Al0.42Si0.58O2/Ru(0001) thin-films.;Surface Science;2020-06

3. Ab Initio Theory of Interband Transitions;Springer Handbook of Surface Science;2020

4. Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing;Surface Science;2019-05

5. Abrupt changes in the graphene on Ge(001) system at the onset of surface melting;Carbon;2019-04

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