Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing-Reference-Cited by-同舟云学术

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Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing

Published:2019-05 Issue: Volume:683 Page:31-37
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Persichetti L.^ORCID,Fanfoni M.,Bonanni B.,De Seta M.,Di Gaspare L.,Goletti C.,Ottaviano L.,Sgarlata A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference55 articles.

1. Structural properties of self-organized semiconductor nanostructures;Stangl;Rev. Mod. Phys.,2004

2. SiGe nanostructures;Berbezier;Surf. Sci. Rep.,2009

3. Growth and self-organization of SiGe nanostructures;Aqua;Phys. Rep.,2013

4. Breaking elastic field symmetry with substrate vicinality;Persichetti;Phys. Rev. Lett.,2011

5. Modified strain and elastic energy behavior of Ge islands formed on high-miscut Si(0 0 ;1) substrates;Marçal;Appl. Surf. Sci.,2019

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Light-Emission from Ion-Implanted Group-IV Nanostructures;Topics in Applied Physics;2021

2. Driving with temperature the synthesis of graphene on Ge(110);Applied Surface Science;2020-01

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