Thomas-Fermi approximation in a tight-binding calculation ofδ-doped quantum wells in GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.1142/fulltext
Reference28 articles.
1. Thomas-Fermi theory of δ-doped semiconductor structures: Exact analytical results in the high-density limit
2. Infrared excitation of the subbands of A δ-layer in GaAs and Si
3. Hyperfine populations prior to muon capture
4. Raman scattering from electronic excitations in periodically δ-doped GaAs
5. Thomas-Fermi approximation inp-type δ-doped quantum wells of GaAs and Si
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1. Intermediate band formation in a δ -doped like QW superlattices of GaAs/Al x Ga 1−x As for solar cell design;Superlattices and Microstructures;2018-03
2. Electronic properties ofδ-doped Si:P and Ge:P layers in the high-density limit using a Thomas-Fermi method;Physical Review B;2014-01-13
3. Selfsimilar and fractal analysis of n-type delta-doped quasiregular GaAs quantum wells;AIP Conference Proceedings;2014
4. Valence band states in Si-based p-type delta-doped field effect transistors;Journal of Physics: Conference Series;2009-05-01
5. Tight-binding study of the hole subband structure properties of p-type delta-doped quantum wells in Si by using a Thomas-Fermi-Dirac potential;Journal of Physics: Conference Series;2009-05-01
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