Infrared excitation of the subbands of A δ-layer in GaAs and Si-Reference-Cited by-同舟云学术

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Infrared excitation of the subbands of A δ-layer in GaAs and Si

Published:1990-04 Issue:1-3 Volume:228 Page:247-250
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Tempel G.,Müller F.,Schwarz N.,Koch F.,Weimann G.,Zeindl H.P.,Eisele I.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference9 articles.

1. Optical Determination of the Symmetry of the Ground States of Group-V Donors in Silicon

2. Resonant excitation of a layer of Si donors in GaAs

3. Resonance spectroscopy of InGaAs/InP quantum well sub-bands

4. Inter-subband optical absorption in space-charge layers on semiconductor surfaces

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thomas–Fermi approximation of double n-type delta-doped GaAs quantum wells: sub-band and transport calculations;Microelectronics Journal;2005-03

2. The effect of the donor distribution on the electronic structure of two coupled Si δ-doped layers in GaAs;Physica B: Condensed Matter;2003-06

3. Exchange and correlation via functional of Thomas-Fermi in delta-doped quantum wells;Modelling and Simulation in Materials Science and Engineering;2000-12-14

4. Exchange and Correlation in a Semi-Empirical Tight Binding Calculation within the Thomas-Fermi Approximation;physica status solidi (b);1999-10

5. Thomas-Fermi approximation in a tight-binding calculation ofδ-doped quantum wells in GaAs;Physical Review B;1998-07-15

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