Exchange and correlation via functional of Thomas-Fermi in delta-doped quantum wells
Author:
Publisher
IOP Publishing
Subject
Computer Science Applications,Mechanics of Materials,Condensed Matter Physics,General Materials Science,Modelling and Simulation
Reference18 articles.
1. Delta- (°-) doping in MBE-grown GaAs: Concept and device application
2. The delta-doped field-effect transistor (δFET)
3. Schottky-barrier tunneling spectroscopy for the electronic subbands of a δ-doping layer
4. Comparison of Si δ-doping with homogeneous doping in GaAs
5. A simple model for delta‐doped field‐effect transistor electronic states
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1. Intersubband optical properties of a laser-dressed asymmetric triple quantum well nanostructure;Physica E: Low-dimensional Systems and Nanostructures;2019-10
2. Thomas-Fermi method for computing the electron spectrum and wave functions of highly doped quantum wires in n-Si;Facta universitatis - series: Electronics and Energetics;2015
3. COMBINED METHOD FOR SIMULATING ELECTRON SPECTRUM OF δ-DOPED QUANTUM WELLS IN N-SI WITH MANY-BODY CORRECTIONS;Progress In Electromagnetics Research M;2013
4. Hydrostatic pressure effects onto the electronic structure and differential capacitance profile for a metal/δ-doped-GaAs.;MRS Proceedings;2012
5. Electron spectrum of δ-doped quantum wells by the Thomas–Fermi method at finite temperatures;Physica B: Condensed Matter;2011-05
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