Electronic properties ofδ-doped Si:P and Ge:P layers in the high-density limit using a Thomas-Fermi method
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.89.035306/fulltext
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1. Thermal dissociation and desorption ofPH3on Si(001): A reinterpretation of spectroscopic data
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5. Ultradense phosphorous delta layers grown into silicon from PH3 molecular precursors
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