n-Type Doping of Germanium from Phosphine: Early Stages Resolved at the Atomic Level-Reference-Cited by-同舟云学术

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n-Type Doping of Germanium from Phosphine: Early Stages Resolved at the Atomic Level

Published:2012-08-13 Issue:7 Volume:109 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Scappucci G.,Warschkow O.,Capellini G.,Klesse W. M.,McKenzie D. R.,Simmons M. Y.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.109.076101/fulltext

Reference21 articles.

1. Academic and industry research progress in germanium nanodevices

2. Recent progress in lasers on silicon

3. A Complete Fabrication Route for Atomic-Scale, Donor-Based Devices in Single-Crystal Germanium

4. In Situ Phosphorus Doping of Germanium by APCVD

5. Phosphorus atomic layer doping of germanium by the stacking of multiple δ layers

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1. Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface**;Angewandte Chemie International Edition;2023-01-10

2. Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface**;Angewandte Chemie;2023-01-10

3. Challenges in ultra-shallow junction technology;CMOS Past, Present and Future;2018

4. Organic Functionalization in Vacuum;Encyclopedia of Interfacial Chemistry;2018

5. Doping top-down e-beam fabricated germanium nanowires using molecular monolayers;Materials Science in Semiconductor Processing;2017-05

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