A Complete Fabrication Route for Atomic-Scale, Donor-Based Devices in Single-Crystal Germanium-Reference-Cited by-同舟云学术

A Complete Fabrication Route for Atomic-Scale, Donor-Based Devices in Single-Crystal Germanium

Published:2011-05-10 Issue:6 Volume:11 Page:2272-2279
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Scappucci G.¹²,Capellini G.³,Johnston B.⁴,Klesse W. M.¹²,Miwa J. A.¹²,Simmons M. Y.¹²

Affiliation:

1. School of Physics, University of New South Wales, Sydney, NSW 2052, Australia

2. Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, University of New South Wales, Sydney, NSW 2052, Australia

3. Dipartimento di Fisica, Università di Roma Tre, Via della Vasca Navale 84, 00146 Roma, Italy

4. Macquarie University, Department of Physics, MQ Photon, North Ryde, NSW 2122 Australia

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl200449v

Reference35 articles.

1. High-k/Ge MOSFETs for future nanoelectronics

2. Germanium channel MOSFETs: Opportunities and challenges

3. Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures

4. High-Speed Near Infrared Optical Receivers Based on Ge Waveguide Photodetectors Integrated in a CMOS Process

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