Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface**-Reference-Cited by-同舟云学术

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Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface**

Published:2023-01-10 Issue:7 Volume:135 Page:
ISSN:0044-8249
Container-title:Angewandte Chemie
language:en
Short-container-title:Angewandte Chemie

Author:

Hofmann Emily V. S.¹²³^ORCID,Stock Taylor J. Z.¹²,Warschkow Oliver¹,Conybeare Rebecca¹⁴,Curson Neil J.¹²^ORCID,Schofield Steven R.¹⁴^ORCID

Affiliation:

1. London Centre for Nanotechnology University College London London WC1H 0AH UK

2. Department of Electronic and Electrical Engineering University College London London WC1E 6BT UK

3. IHP Leibniz-Institut für Innovative Mikroelektronik Im Technologiepark 25 15236 Frankfurt (Oder) Germany

4. Department of Physics and Astronomy University College London London WC1E 6BT UK

Funder

Engineering and Physical Sciences Research Council

Publisher

Wiley

Subject

General Medicine

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/ange.202213982

Reference38 articles.

1. The germanium quantum information route

2. A four-qubit germanium quantum processor

3. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

4. Effects of Spin-Orbit Coupling in Si and Ge

5. Large Stark tuning of donor electron spin qubits in germanium

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1. Separation of arsenic and antimony: A comprehensive theoretical and experimental study;Journal of Materials Research and Technology;2024-07

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