Raman scattering from electronic excitations in periodically δ-doped GaAs-Reference-Cited by-同舟云学术

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Raman scattering from electronic excitations in periodically δ-doped GaAs

Published:1990-04 Issue:1-3 Volume:228 Page:251-254
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Maciel A.C.,Tatham M.,Ryan J.F.,Worlock J.M.,Nahory R.E.,Harbison J.P.,Florez L.T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference7 articles.

1. Two-Dimensional Systems: Physics and New Devices;Koch,1986

2. Subband physics for a “realistic” δ-doping layer

3. Saturation of the free-electron concentration in delta -doped GaAs: the DX centre in two dimensions

4. Spatial localization of impurities in δ‐doped GaAs

5. Subbands in Space-Charge Layers on Narrow Gap Semiconductors: Validity of Semiclassical Approximation

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5. Effect of Magnetic Field on a p-Type δ-Doped GaAs Layer;Chinese Physics Letters;2010-07

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