Lifetime studies of self-activated photoluminescence in heavily silicon-doped GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.1900/fulltext
Reference31 articles.
1. The lattice locations of silicon impurities in GaAs: effects due to stoichiometry, the Fermi energy, the solubility limit and DX behaviour
2. Mechanism of compensation in heavily silicon‐doped gallium arsenide grown by molecular beam epitaxy
3. Evidence for donor‐gallium vacancy pairs in silicon doped GaAs grown by molecular beam epitaxy at low temperatures
4. Evidence for Self-Activated Luminescence in GaAs: The Gallium Vacancy-Donor Center
5. Photoluminescence study of Si+‐ and Si++P+‐implanted InP
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