Time-resolved photoluminescence characterization of oxygen-related defect centers in AlN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4958891
Reference40 articles.
1. Epitaxially grown AlN and its optical band gap
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5. Optical Properties of AIN Single Crystals in the Energy Region 3 to 40 eV
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