Oxygen defect dominated photoluminescence emission of ScxAl1−xN grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

Oxygen defect dominated photoluminescence emission of ScxAl1−xN grown by molecular beam epitaxy

Published:2021-01-18 Issue:3 Volume:118 Page:032102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Ping¹^ORCID,Wang Boyu¹,Laleyan David Arto¹^ORCID,Pandey Ayush¹^ORCID,Wu Yuanpeng¹^ORCID,Sun Yi¹^ORCID,Liu Xianhe¹,Deng Zihao²,Kioupakis Emmanouil²^ORCID,Mi Zetian¹^ORCID

Affiliation:

1. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA

2. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA

Funder

Naval Research Office

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0035026

Reference44 articles.

1. Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes

2. Monolayer GaN excitonic deep ultraviolet light emitting diodes

3. Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

4. Gallium nitride nanowire as a linker of molybdenum sulfides and silicon for photoelectrocatalytic water splitting

5. A GaN:Sn nanoarchitecture integrated on a silicon platform for converting CO2 to HCOOH by photoelectrocatalysis

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