Monolayer GaN excitonic deep ultraviolet light emitting diodes
Author:
Affiliation:
1. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA
2. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
Funder
University Of Michigan College of Engineering
National Science Foundation
US Army Research Office
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5124828
Reference51 articles.
1. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
2. Molecular beam epitaxy and characterization of AlGaN nanowire ultraviolet light emitting diodes on Al coated Si (0 0 1) substrate
3. An AlGaN Core–Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band
4. III-Nitride nanowire optoelectronics
5. Sub-milliwatt AlGaN nanowire tunnel junction deep ultraviolet light emitting diodes on silicon operating at 242 nm
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