Photoluminescence study of Si+‐ and Si++P+‐implanted InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346123
Reference12 articles.
1. Annealing of damage in Se+-implanted indium phosphide
2. The electrical characteristics of InP implanted with the column IV elements
3. High carrier concentration in InP by Si+and P+dual implantations
4. Band‐to‐band luminescence of ion‐implanted InP after rapid lamp annealing
5. Photoluminescence study of the Si‐implanted and rapid thermal annealed InP:Fe
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrical characterization of deep levels existing in Mg-Si- and Mg-P-Si-implanted n InP junctions;Semiconductor Science and Technology;1998-04-01
2. Raman-scattering criteria for characterization of anneal-restored zinc blende single crystals: Application to Si+-implanted InP;Journal of Applied Physics;1997-10-15
3. Novel features of photoluminescence spectra from acceptor-doped GaAs: formation of acceptor—acceptor pair emissions and optical compensation effect;Materials Science and Engineering: R: Reports;1996-06
4. Lifetime studies of self-activated photoluminescence in heavily silicon-doped GaAs;Physical Review B;1996-01-15
5. Defect‐assisted ohmic contacts onp‐InP;Journal of Applied Physics;1995-03
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