Band‐to‐band luminescence of ion‐implanted InP after rapid lamp annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94850
Reference4 articles.
1. Rapid thermal annealing of Se and Be implanted InP using an ultrahigh power argon arc lamp
2. Heat-pulse annealing of arsenic-implanted silicon with a CW arc lamp
3. Cathodoluminescence of InP
4. Laser beam heating and high temperature band‐to‐band luminescence of GaAs and InP
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Component Evaporation, Defect Annealing, and Impurity Diffusion in the III–V Semiconductors;Rapid Thermal Processing of Semiconductors;1997
2. Rapid Isothermal Processing (RIP);Handbook of Compound Semiconductors;1995
3. Investigation of the 1.20-eV photoluminescence band in rapid thermal annealed InP;Journal of Electronic Materials;1994-05
4. Characterization of high temperature annealing of InP by scanning photoluminescence and capacitance-voltage measurements of metal/insulator/semiconductor devices;Materials Science and Engineering: B;1991-07
5. Photoluminescence study of Si+‐ and Si++P+‐implanted InP;Journal of Applied Physics;1990-11
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