Interaction of deuterium with defects in silicon studied by means of channeling
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.37.6353/fulltext
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1. Structure of hydrogen center in D-implanted Si
2. Bonding and thermal stability of implanted hydrogen in silicon
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4. Models for the Hydrogen-Related Defect—Impurity Complexes and SiH Infrared Bands in Crystalline Silicon
5. On the identification of the vibrational spectra in hydrogen implanted crystalline silicon
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