Vacancies and the Chemical Trapping of Hydrogen in Silicon
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.43.1030/fulltext
Reference13 articles.
1. Bonding and thermal stability of implanted hydrogen in silicon
2. Infrared absorption of silicon irradiated by protons
3. Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering
4. Electronic properties of substitutionally doped amorphous Si and Ge
5. Electrical properties of n-type Si layers doped with proton bombardment induced shallow donors
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