Models for the Hydrogen-Related Defect—Impurity Complexes and SiH Infrared Bands in Crystalline Silicon-Reference-Cited by-同舟云学术

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Models for the Hydrogen-Related Defect—Impurity Complexes and SiH Infrared Bands in Crystalline Silicon

Published:1982-11-16 Issue:1 Volume:74 Page:329-341
ISSN:0031-8965
Container-title:physica status solidi (a)
language:de
Short-container-title:phys. stat. sol. (a)

Author:

Shi T. S.,Sahu S. N.,Oehrlein G. S.,Hiraki A.,Corbett J. W.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference34 articles.

1. Inst. Phys. C;Picraux,1979

2. Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering

3. Hydrogen bonding in silicon-hydrogen alloys

4. Structural interpretation of the vibrational spectra ofa-Si: H alloys

5. Bonding and thermal stability of implanted hydrogen in silicon

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