Important role of the non-uniform Fe distribution for the ferromagnetism in group-IV-based ferromagnetic semiconductor GeFe
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4901060
Reference34 articles.
1. Epitaxial Growth and Magnetic Properties of Ferromagnetic Semiconductor Ge1-xFexThin Films Epitaxially Grown on Si(001) Substrates
2. Structural and magnetic properties of epitaxially grown Ge1−xFex thin films: Fe concentration dependence
3. Carrier transport properties of the Group-IV ferromagnetic semiconductor Ge1-xFex with and without boron doping
4. Magneto-optical properties of group-IV ferromagnetic semiconductor Ge1−xFex grown by low-temperature molecular beam epitaxy
5. Epitaxial growth and magnetic properties of a new group-IV ferromagnetic semiconductor: Ge1–xFex
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1. Recent progress in ferromagnetic semiconductors and spintronics devices;Japanese Journal of Applied Physics;2020-12-15
2. III-V and Group-IV-Based Ferromagnetic Semiconductors for Spintronics;Comprehensive Nanoscience and Nanotechnology;2019
3. Impurity band conduction in group-IV ferromagnetic semiconductor Ge1-xFex with nanoscale fluctuations in Fe concentration;Journal of Applied Physics;2018-09-21
4. Fe concentration dependence of tunneling magnetoresistance in magnetic tunnel junctions using group-IV ferromagnetic semiconductor GeFe;AIP Advances;2017-10
5. Origin of robust nanoscale ferromagnetism in Fe-doped Ge revealed by angle-resolved photoemission spectroscopy and first-principles calculation;Physical Review B;2017-02-08
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