Prevention of crystallization by surfactants during Si molecular-beam deposition on amorphous-Si films
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.6803/fulltext
Reference22 articles.
1. Surfactants in epitaxial growth
2. Influence of surfactants in Ge and Si epitaxy on Si(001)
3. Novel strain-induced defect in thin molecular-beam epitaxy layers
4. Microstructure and strain relief of Ge films grown layer by layer on Si(001)
5. Defect self-annihilation in surfactant-mediated epitaxial growth
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