Dicarbon defects in carbon-doped GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.67.035208/fulltext
Reference15 articles.
1. Abruptp‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy
2. Strain relaxation and compensation due to annealing in heavily carbon‐doped GaAs
3. A comparative study of carbon incorporation in heavily doped GaAs and Al[sub 0.3]Ga[sub 0.7]As grown by solid-source molecular beam epitaxy using carbon tetrabromide
4. Interaction of a relaxing system with a dynamical environment
5. LVM spectroscopy of carbon and carbon-hydrogen pairs in GaAs grown by MOMBE
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1. p-type doping of GaAs nanowires using carbon;Journal of Applied Physics;2012-11
2. Effect of thermal annealing on properties of InSbN grown by molecular beam epitaxy;Applied Physics Letters;2010-04-19
3. Effects of Mg doping on the electrical and luminescence characterizations of p-type GaAsN alloys grown by MBE;Journal of Crystal Growth;2010-01
4. Carbon-nitrogen molecules in GaAs and GaP;Physical Review B;2008-05-21
5. Dicarbon defects in as-grown and annealed carbon-doped InAs;Journal of Applied Physics;2007-10-15
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