A comparative study of carbon incorporation in heavily doped GaAs and Al[sub 0.3]Ga[sub 0.7]As grown by solid-source molecular beam epitaxy using carbon tetrabromide-Reference-Cited by-同舟云学术

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A comparative study of carbon incorporation in heavily doped GaAs and Al[sub 0.3]Ga[sub 0.7]As grown by solid-source molecular beam epitaxy using carbon tetrabromide

Published:1999 Issue:3 Volume:17 Page:1180
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Lubyshev D.,Micovic M.,Gratteau N.,Cai W.-Z.,Miller D. L.,Ray O.,Streater R. W.,SpringThorpe A. J.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of CBr4, V/III ratio, temperature and AsH3 concentration on MOVPE growth of GaAsSb:C;Journal of Crystal Growth;2009-03

2. MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications;Journal of Crystal Growth;2007-04

3. Co-doping carbon tetrabromide (CBr4) and antimony (Sb) on GaAs [100] in solid source molecular beam epitaxy;Journal of Crystal Growth;2004-06

4. Surface morphology of heavily carbon-doped GaAs grown by solid source molecular beam epitaxy;Journal of Crystal Growth;2004-03

5. Effects of carbon tetrabromide flux, substrate temperature and growth rate on carbon-doped GaAs grown by molecular beam epitaxy;Journal of Crystal Growth;2004-02

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