Effect of thermal annealing on properties of InSbN grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3399775
Reference22 articles.
1. InSbN alloys prepared by two-step ion implantation for infrared photodetection
2. Assessment of electronic properties of InNxSb1−x for long-wavelength infrared detector applications
3. Determination of the substitutional nitrogen content and the electron effective mass in InNxSb1−x (001) epitaxial layers
4. Effects of nitrogen incorporation in InSb1−xNx grown using radio frequency plasma-assisted molecular beam epitaxy
5. Growth and characterisation of high quality MBE grown InNxSb1–x
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