Assessment of electronic properties of InNxSb1−x for long-wavelength infrared detector applications
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference15 articles.
1. Quantum well photoconductors in infrared detector technology
2. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
3. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
4. High nitrogen incorporation in GaAsN epilayers grown by chemical beam epitaxy using radio-frequency plasma source
5. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. InSbNBi/InSb heterostructures for long wavelength infrared photodetector applications: A 16 band k · p study;Journal of Applied Physics;2020-09-07
2. Bonding and diffusion of nitrogen in the InSbN alloys fabricated by two-step ion implantation;Applied Physics Letters;2012-07-09
3. Effect of thermal annealing on properties of InSbN grown by molecular beam epitaxy;Applied Physics Letters;2010-04-19
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