High nitrogen incorporation in GaAsN epilayers grown by chemical beam epitaxy using radio-frequency plasma source
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1996853
Reference20 articles.
1. Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements
2. Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x
3. 1-eV solar cells with GaInNAs active layer
4. GaInNAs: a novel material for long-wavelength semiconductor lasers
5. Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN Alloys
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1. Epitaxial growth of metastable semiconductor alloys;Journal of Crystal Growth;2021-06
2. Hydrogen induced quality improvement of GaNAs layers grown by chemical beam epitaxy;Journal of Crystal Growth;2018-10
3. Investigation of dilute-nitride alloys of GaAsNx (0.01 < x < 0.04) grown by MBE on GaAs (001) substrates for photovoltaic solar cell devices;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-01
4. Opportunities in dilute nitride III–V semiconductors quantum confined p–i–n solar cells for single carrier resonant tunneling;Microelectronics Journal;2009-03
5. Dilute nitride-based III-V heterostructures for unhindered carrier transport in quantum-confined p-i-n solar cells;SPIE Proceedings;2009-02-12
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