Investigation of dilute-nitride alloys of GaAsNx (0.01 < x < 0.04) grown by MBE on GaAs (001) substrates for photovoltaic solar cell devices-Reference-Cited by-同舟云学术

Investigation of dilute-nitride alloys of GaAsNx (0.01 < x < 0.04) grown by MBE on GaAs (001) substrates for photovoltaic solar cell devices

Published:2016-01 Issue:1 Volume:34 Page:011210
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Tang Dinghao¹,Vijaya Gopi Krishna²,Mehrotra Akhil²,Freundlich Alex²,Smith David J.³

Affiliation:

1. School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287

2. Center for Advanced Materials, University of Houston, Houston, Texas 77204

3. Department of Physics, Arizona State University, Tempe, Arizona 85287

Funder

National Science Foundation

U.S. Department of Energy

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://aip.scitation.org/doi/am-pdf/10.1116/1.4940127

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1. Growth modes and chemical-phase separation in GaP1−xNx layers grown by chemical beam epitaxy on GaP/Si(001);Journal of Applied Physics;2023-11-02

2. Design and analysis of GaAsN based solar cell for harvesting visible to near-infrared light;Physica Scripta;2022-07-14

3. Detecting minute amounts of nitrogen in GaNAs thin films using STEM and CBED;Ultramicroscopy;2021-12

4. Origin of two special Raman modes in dilute nitrides;Journal of Physics D: Applied Physics;2020-03-31

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