Highly parallel stateful Boolean logic gates based on aluminum-doped self-rectifying memristors in a vertical crossbar array structure-Reference-Cited by-同舟云学术

Highly parallel stateful Boolean logic gates based on aluminum-doped self-rectifying memristors in a vertical crossbar array structure

Published:2023 Issue:13 Volume:15 Page:6387-6395
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Park Taegyun¹^ORCID,Kim Seung Soo¹,Lee Byeol Jun¹,Park Tae Won¹,Kim Hae Jin²,Hwang Cheol Seong¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea

2. Department of Materials Science and Engineering, Myongji University, Yongin, 17058, Republic of Korea

Abstract

Aluminum-doped self-rectifying memristors in vertical arrays enable in-memory computing that can synthesize multi-layered Boolean logic functions in parallel, suppressing the sneak current.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D3NR00271C

Reference33 articles.

1. Y.-C.Kwon , S. H.Lee , J.Lee , S.-H.Kwon , J. M.Ryu , J.-P.Son , S.O , H.-S.Yu , H.Lee , S. Y.Kim , Y.Cho , J. G.Kim , J.Choi , H.-S.Shin , J.Kim , B.Phuah , H.Kim , M. J.Song , A.Choi , D.Kim , S.Kim , E.-B.Kim , D.Wang , S.Kang , Y.Ro , S.Seo , J.Song , J.Youn , K.Sohn and N. S.Kim , in 2021 IEEE International Solid - State Circuits Conference (ISSCC) , 2021

2. Memory devices and applications for in-memory computing

3. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

4. High‐Speed and Low‐Energy Nitride Memristors

5. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Programmable Threshold Logic Implementations in a Memristor Crossbar Array;Nano Letters;2024-03-12

2. Organic iontronic memristors for artificial synapses and bionic neuromorphic computing;Nanoscale;2024

3. Heterogeneous reservoir computing in second-order Ta₂O₅/HfO₂ memristors;Nanoscale Horizons;2024

4. Self‐Rectifying Memristors for Three‐Dimensional In‐Memory Computing;Advanced Materials;2023-11-27

5. Parallel Density‐Based Spatial Clustering with Dual‐Functional Memristive Crossbar Array;Advanced Functional Materials;2023-11-12