Heterogeneous reservoir computing in second-order Ta2O5/HfO2 memristors-Reference-Cited by-同舟云学术

Heterogeneous reservoir computing in second-order Ta₂O₅/HfO₂ memristors

Published:2024 Issue: Volume: Page:
ISSN:2055-6756
Container-title:Nanoscale Horizons
language:en
Short-container-title:Nanoscale Horiz.

Author:

Ghenzi Nestor¹²^ORCID,Park Tae Won¹,Kim Seung Soo¹,Kim Hae Jin³,Jang Yoon Ho¹,Woo Kyung Seok¹^ORCID,Hwang Cheol Seong¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea

2. Universidad de Avellaneda UNDAV and Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Argentina

3. Department of Materials Science and Engineering, Myongji University, Yongin 17058, Korea

Abstract

The mixture of leaky and self-rectifying memristors in the reservoir increases the accuracy in MNIST-digits recognition task.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NH/D3NH00493G

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