Impact of Zr top electrode on tantalum oxide-based electrochemical metallization resistive switching memory: towards synaptic functionalities-Reference-Cited by-同舟云学术

Impact of Zr top electrode on tantalum oxide-based electrochemical metallization resistive switching memory: towards synaptic functionalities

Published:2022 Issue:22 Volume:12 Page:14235-14245
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Raeis-Hosseini Niloufar¹^ORCID,Chen Shaochuan²,Papavassiliou Christos¹,Valov Ilia²³^ORCID

Affiliation:

1. Department of Electronics and Electrical Engineering, Imperial College London, London, SW7 2BT, UK

2. Peter Gruenberg Institute, Research Centre Juelich, Juelich 52425, Germany

3. Institute for Materials in Electrical Engineering II, RWTH Aachen University, Sommerfeldstrasse 24, Aachen 52074, Germany

Abstract

Zr is a potential active electrode in the electrochemical metallization cells (ECMs) for the next generation of nonvolatile nanoelectronics. The ECM device works under AC pulses to emulate the essential characteristics of an artificial synapse.

Funder

Royal Society

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/RA/D2RA02456J

Reference56 articles.

1. Active Electrode Redox Reactions and Device Behavior in ECM Type Resistive Switching Memories

2. High Carrier Density and Metallic Conductivity in Poly(3-hexylthiophene) Achieved by Electrostatic Charge Injection

3. Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaOx thin film with x ∼ 1

4. Electrochemical Tantalum Oxide for Resistive Switching Memories

5. Resistive switching memory using biomaterials

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Molecular Layering of an Additive Layer of Silicon Dioxide on Anodized Tantalum and Niobium Oxides;Микроэлектроника;2024-07-17

2. Dissolvable Flexible Biomemristor Based on a Collagen Electrolyte and Mg Electrodes for Transient Electronics;ACS Applied Electronic Materials;2024-05-14

3. Forming-Free, Low-Voltage, and High-Speed Resistive Switching in Ag/Oxygen-Deficient Vanadium Oxide(VO_x)/Pt Device through Two-Step Resistance Change by Ag Filament Formation;ACS Applied Materials & Interfaces;2024-05-13

4. Molecular Layering of an Additive Layer of Silicon Dioxide on Anodized Tantalum and Niobium Oxides;Russian Microelectronics;2024-02

5. Anisotropic stress mechanisms for different dielectric multi-layer films deposited by ion-beam assisted deposition on flexible substrates;Thin Solid Films;2023-10