Forming-Free, Low-Voltage, and High-Speed Resistive Switching in Ag/Oxygen-Deficient Vanadium Oxide(VO<sub><i>x</i></sub>)/Pt Device through Two-Step Resistance Change by Ag Filament Formation-Reference-Cited by-同舟云学术

Forming-Free, Low-Voltage, and High-Speed Resistive Switching in Ag/Oxygen-Deficient Vanadium Oxide(VO_x)/Pt Device through Two-Step Resistance Change by Ag Filament Formation

Published:2024-05-13 Issue:20 Volume:16 Page:26450-26459
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Ryu Jiyeon¹^ORCID,Park Kitae¹^ORCID,Sahu Dwipak Prasad²^ORCID,Yoon Tae-Sik¹²^ORCID

Affiliation:

1. Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea

2. Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.4c04874

Reference53 articles.

1. Filamentary switching of ReRAM investigated by in-situ TEM

2. Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

3. Ultra-low power Al2O3-based RRAM with 1μA reset current

4. Low-power resistive random access memory by confining the formation of conducting filaments

5. Investigation of Resistive Switching Mechanisms in Ti/TiO x /Pd‐Based RRAM Devices

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