Low-power resistive random access memory by confining the formation of conducting filaments-Reference-Cited by-同舟云学术

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Low-power resistive random access memory by confining the formation of conducting filaments

Published:2016-06 Issue:6 Volume:6 Page:065022
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Huang Yi-Jen¹,Shen Tzu-Hsien²,Lee Lan-Hsuan²,Wen Cheng-Yen²³,Lee Si-Chen¹

Affiliation:

1. Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan

2. Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan

3. Taiwan Consortium of Emergent Crystalline Materials, Ministry of Science and Technology, Taipei 10617, Taiwan

Funder

Ministry of Science and Technology, Taiwan (MOST)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4954974

Reference32 articles.

1. A Novel Nanowire Channel Poly-Si TFT Functioning as Transistor and Nonvolatile SONOS Memory

2. Enhanced retention characteristic of NiSi2/SiNx compound nanocrystal memory

3. Developments in nanocrystal memory

4. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

5. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

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4. Forming-Free, Low-Voltage, and High-Speed Resistive Switching in Ag/Oxygen-Deficient Vanadium Oxide(VO_x)/Pt Device through Two-Step Resistance Change by Ag Filament Formation;ACS Applied Materials & Interfaces;2024-05-13

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