Onset and microscopic origin of resistive random-access memory characteristics on low-cost thermally treated mixed phase CuxO (x = 1,2) on Cu sheet-Reference-Cited by-同舟云学术

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Onset and microscopic origin of resistive random-access memory characteristics on low-cost thermally treated mixed phase CuxO (x = 1,2) on Cu sheet

Published:2024-10 Issue: Volume:193 Page:112189
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Prakash Chandra^ORCID,Yadav Ankit K.,Dixit Ambesh^ORCID

Funder

Indian Institute of Technology Jodhpur

Publisher

Elsevier BV

Reference49 articles.

1. Reversible bistability of conductance on graphene/CuOx/Cu nanojunction;Phys,2012

2. RSC Advances A comprehensive investigation of MoO 3 based resistive random access memory;Fatheema;RSC Adv.,2020

3. Functional Inorganic materials and devices atomic layer deposition of Ga2O3/ZnO composite films for atomic layer deposition of Ga 2 O 3/ZnO composite films for forming-free;Memory;ACS Appl. Mater. Interfaces,2020

4. All solution-processed , Fully Transparent resistive memory devices;Kim;ACS Appl. Mater. Interfaces,2011

5. Reliable and forming free bipolar resistive switching in solution derived Ag/BiFe0.99Cr0.01O3/FTO device;Kumari,2019

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