A comprehensive investigation of MoO3 based resistive random access memory-Reference-Cited by-同舟云学术

A comprehensive investigation of MoO3 based resistive random access memory

Published:2020 Issue:33 Volume:10 Page:19337-19345
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Fatheema Jameela¹²³⁴⁵,Shahid Tauseef⁶⁷⁸⁹¹⁰,Mohammad Mohammad Ali¹¹¹²⁵¹³,Islam Amjad¹⁴¹⁵¹⁶¹⁷,Malik Fouzia¹⁸¹²⁵¹³,Akinwande Deji¹⁹²⁰²¹²²,Rizwan Syed¹²³⁴⁵^ORCID

Affiliation:

1. Physics Characterization and Simulations Lab

2. Department of Physics

3. School of Natural Sciences (SNS)

4. National University of Sciences and Technology (NUST)

5. Islamabad 54000

6. CAS Key Laboratory of Magnetic Materials and Application Technology

7. Ningbo Institute of Materials Technology and Engineering

8. Chinese Academy of Sciences

9. Ningbo

10. China

11. School of Chemical and Materials Engineering

12. National University of Sciences & Technology (NUST)

13. Pakistan

14. College of Materials Engineering

15. Fujian Agriculture and Forestry University

16. Fuzhou-350002

17. P. R. China

18. Research Centre for Modelling and Simulations

19. Microelectronics Research Center

20. The University of Texas at Austin

21. Austin

22. USA

Abstract

The bipolar resistive switching of molybdenum oxide is deliberated while molybdenum and nickel are used as bottom and top electrodes, respectively, to present a device with resistive random access memory (RRAM) characteristics.

Funder

Higher Education Commision, Pakistan

National University of Sciences and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/RA/D0RA03415K

Reference65 articles.

1. A review of emerging non-volatile memory (NVM) technologies and applications

2. Review of Emerging New Solid-State Non-Volatile Memories