Investigation of Resistive Switching Mechanisms in Ti/TiO x /Pd‐Based RRAM Devices-Reference-Cited by-同舟云学术

Investigation of Resistive Switching Mechanisms in Ti/TiO x /Pd‐Based RRAM Devices

Published:2021-12-30 Issue: Volume: Page:2100827
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Hu Ruofei¹,Li Xinyi¹,Tang Jianshi¹²,Li Yijun¹,Zheng Xiaojian¹,Gao Bin¹²,Qian He¹²,Wu Huaqiang¹²^ORCID

Affiliation:

1. School of Integrated Circuits Beijing National Research Center for Information Science and Technology (BNRist) Tsinghua University Beijing 100084 China

2. Beijing Innovation Center for Future Chips (ICFC) Tsinghua University Beijing 100084 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202100827

Reference37 articles.

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