Molecular Layering of an Additive Layer of Silicon Dioxide on Anodized Tantalum and Niobium Oxides
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Publisher
Pleiades Publishing Ltd
Link
https://link.springer.com/content/pdf/10.1134/S1063739723600942.pdf
Reference28 articles.
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2. Mbisike, S.C., Tsiamis, A., Lomax, P., and Cheung, R., Anodic tantalum: Fabrication, breakdown characteristics of capacitor and integration with a WSe2 field effect transistor, Solid-State Electron., 2022, vol. 196, p. 108423. https://doi.org/10.1016/j.sse.2022.108423
3. Boyeras Baldomá, S., Pazos, S.M., Aguirre, F.L., Ankonina, G., Kornblum, L., Yalon, E., and Palumbo, F., Wear-out and breakdown of Ta2O5/Nb:SrTiO3 stacks, Solid-State Electron., 2022, vol. 198, pp. 108462–108466. https://doi.org/10.1016/j.sse.2022.108462
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5. Molinnus, D., Iken, H., Johnen, A.L., Richstein, B., Hellmich, L., Poghossian, A., Knoch, J., and Schöning, M.J., Miniaturized pH-sensitive field-effect capacitors with ultrathin Ta2O5 films prepared by atomic layer deposition, Phys. Status Solidi A, 2022, vol. 219, no. 8, pp. 2100660–2100669. https://doi.org/10.1002/pssa.202100660
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